msc0xxxa.doc 5-13-99 MS2223 absolute absolute maximum maximum ratings ratings ( tcase = 25 c) symbol parameter value unit v cc collector-supply voltage* 32 v i c device current* 8.0 a p diss power dissipation* 200 w t j junction temperature 200 c t st g storage temperature - 65 to + 200 c thermal data thermal data r th(j-c) junction-case thermal resistance* 0.68 c/w * applies only to rated rf operation. features gold metallization emitter site ballasted pout = 70 w minimum gp = 6.7 db overlay geometry metal/ceramic hermetic package low thermal resistance description: description: the MS2223 is a silicon npn bipolar transistor designed for avionics applications with high duty cycle requirements. gold metallization and emitter ballasting provides long term reliability under long pulse formats. rf & microwave transistors avionics applications adv anced po wer t echnology reserv es the right to change, without notice, the specif ications and information contained herein. v isit our web site at www .ad v ancedpo wer.com or contact our f actory direct.
msc0xxxa.doc 5-13-99 MS2223 MS2223 electrical specifications ( electrical specifications ( tcase = 25 tcase = 25 c) c) static static symbol test conditions value min. typ. max. unit bv cbo i c = 25ma i e = 0 ma 55 ---- ---- v bv cer i c = 25 ma r b e = 10 w w 55 ---- ---- v bv ebo i e = 10 ma i c = 0 ma 3.5 ---- ---- v i ces v ce = 35 v v b e = 0 v ---- ---- 20 ma h fe v ce = 5 v i c = 2a 20 ---- 200 ---- dynamic dynamic symbol test conditions value min. typ. max. unit p out f = 1090 mhz p in = 15 w v cc = 28 v 70 ---- ---- w h h c f = 1090 mhz p in = 15 w v cc = 28 v 45 ---- ---- % g p f = 1090 mhz p in = 15 w v cc = 28 v 6.7 ---- ---- db condition s pulse width: 100 m m s duty cycle: 2% impedance data: impedance data: frequency zin zcl 1025 mhz 4.7 + j4.7 3.6 + j4.3 1090 mhz 4.7 + j3.9 3.3 + j4.4 pin = 15w vcc = 28v
msc0xxxa.doc 5-13-99 MS2223 package mechanical data
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